NOVEL METHOD FOR MEASURING INTENSITY DISTRIBUTION OF FOCUSED ION-BEAMS

被引：15

作者：

ARIMOTO, H

TAKAMORI, A

MIYAUCHI, E

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 12期

关键词：

D O I：

10.1143/JJAP.22.L780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L780 / L782

页数：3

共 7 条

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[5] A 100 KV MASKLESS ION-IMPLANTATION SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE FOR III-V-COMPOUND SEMICONDUCTORS [J].

MIYAUCHI, E ;

ARIMOTO, H ;

HASHIMOTO, H ;

FURUYA, T ;

UTSUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05) :L287-L288

[6]

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[7]

SELIGER RL, 1979, J VAC SCI TECHNOL, V16, P1618

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