Growth, microstructure, optical and electrical properties of sprayed CuInSe2 polycrystalline films

被引：24

作者：

Akl, Alaa A. ^{[1
]}

Afify, H. H. ^{[1
]}

机构：

[1] Natl Res Ctr, Dept Solid State Phys, Giza, Egypt

来源：

MATERIALS RESEARCH BULLETIN | 2008年 / 43卷 / 06期

关键词：

thin films;

D O I：

10.1016/j.materresbull.2007.06.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline thin films of CuInSe2 have been prepared by chemical spray pyrolysis technique as a function of Cu/In ratio. Incremental growth of the various ratios followed at different substrate temperatures ranging from 548 to 623 K. Characterizations by means of compositional analysis, X-ray diffraction and spectrophotometry measurements have been carried out. Voigt profile method has been used to determine the microstructure parameter (crystallite/domain size and macrostrain). The effect of Cu/In ratio as well as substrate temperature on the optical features (absorption coefficient and band gap) of these films has been investigated. The films of different Cu/In ratios (0.9-1.1) displayed a band gap from 0.92 to 1.025 eV for direct transition. The dark resistivity measurements at room temperature of Cu-rich samples show about five orders of magnitude higher than that of In-rich samples. (C) 2007 Published by Elsevier Ltd.

引用

页码：1539 / 1548

页数：10

共 24 条

[1]

AKL AA, 1997, THESIS ELMINIA U EGY

[2] Structural study of flash evaporated CuInSe2 thin films [J].