Study of polycrystalline CuInSe2 thin film formation

被引：21

作者：

Ashour, A ^{[1
]}

Akl, AAS

Ramadan, AA

Abd El-Hady, K

机构：

[1] Menia Univ, Fac Sci, Dept Phys, Minia, Egypt

[2] Helwan Univ, Fac Sci, Dept Phys, Helwan, Egypt

来源：

THIN SOLID FILMS | 2004年 / 467卷 / 1-2期

关键词：

evaporation; heat treatment; semiconductors; X-ray diffraction;

D O I：

10.1016/j.tsf.2004.04.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuInSe2 polycrystalline films were grown on glass substrates by preparing stacked elemental layers (SELs) of Cu, In and Se followed by annealing at 200, 250, 300 and 400 degreesC for different times (from 15 to 240 min). Additional growth of the various phases was followed at different temperatures until a single phase CuInSe2 film was formed. X-ray diffraction (XRD) was used in identifying the different phases formed. It was concluded that a single phase of CuInSe2 film is obtained at a reaction temperature of 300 degreesC for a heating time 2,! 1 h. (C) 2004 Elsevier B.V. All rights reserved.

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页码：300 / 307

页数：8

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