Nucleation and evolution of Si1-xGex islands on Si(001)

被引：13

作者：

Volpi, F ^{[1
]}

Portavoce, A ^{[1
]}

Ronda, A ^{[1
]}

Shi, Y ^{[1
]}

Gay, JM ^{[1
]}

Berbezier, I ^{[1
]}

机构：

[1] CRMC2, CNRS, F-13288 Marseille 9, France

来源：

THIN SOLID FILMS | 2000年 / 380卷 / 1-2期

关键词：

self-organisation; Si; Ge; islands; molecular beam epitaxy; 2D-3D growth transition; stress relaxation;

D O I：

10.1016/S0040-6090(00)01526-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study we report a systematic investigation of the metastable morphologies of Si1-xGex layers obtained by the interplay of kinetics and thermodynamics during growth on Si(001). We show that three main growth regimes can be distinguished as a function of the misfit and of the deposited thickness. They correspond to three equilibrium steady state morphologies that consist of(105)-facetted hut islands, huts and domes in co-existence, and a bimodal size distribution of domes, respectively. The shape transitions between these states are attributed to different levels of relaxation. (C) 2000 Elsevier Science B.V. All rights reserved.

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收藏

页码：46 / 50

页数：5

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