Kinetic evolution of self-organised SiGe nanostructures

被引:17
作者
Ronda, A
Abdallah, M
Gay, JM
Stettner, J
Berbezier, I
机构
[1] CNRS, CRMC2, F-13288 Marseille 9, France
[2] Univ Kiel, Inst Phys Expt, D-24098 Kiel, Germany
关键词
silicon-germanium; nanostructure; self-organisation; instability; growth mode;
D O I
10.1016/S0169-4332(00)00253-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Si1-xGex/Si growth usually proceeds by a layer by layer growth of the first monolayers followed by 3D growth of islands on the top of the uniform layer (Stranski-Krastanov mode). Self-organisation of these islands is very attractive to create large arrays of nanoscale structures. This paper deals with the self-organisation of Si1-xGex nanostructures by way of kinetic and thermodynamic manipulations. Solid source-molecular beam epitaxy (SS-MBE) and gas source-MBE (GS-MBE) grown heterostructures are characterised by atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXRD). The results concentrate on the role of the atomic configuration of substrates on the metastable shape of islands. By comparing the Si1-xGex layers grown on (111), (001) and misoriented substrates, we prove that the different Si1-xGex morphologies obtained can he explained by different mechanisms of step redistribution on the two nominal orientations. Misoriented surfaces from (111) and from (001) lead to step-bunching roughening and to anisotropic undulations perpendicular to the atomic steps, respectively. The influence of concentration (stress), thickness and annealing on the island-shaped transition is evidenced. Qualitatively, these three parameters induce the same shape evolution: after the onset of "hut" islands, first the island density increases, then a shape transition going through a bimodal distribution of island sizes is observed which leads to the complete transformation into "dome"-shaped islands in the end. The results show that whatever is the underlying mechanism, the onset of the shape transition is related to a critical aspect ratio (h/L) of the islands and to typical level of stress relaxation as shown by GIXRD analysis. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:576 / 583
页数:8
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