Electrochromism of W-oxide-based thin films: Recent advances

被引:22
作者
Azens, A
Hjelm, A
LeBellac, D
Granqvist, CG
Barczynska, J
Pentjuss, E
Gabrusenoks, J
Wills, JM
机构
[1] UNIV UPPSALA,DEPT TECHNOL,S-75121 UPPSALA,SWEDEN
[2] UNIV TECHNOL SYDNEY,DEPT APPL PHYS,BROADWAY,NSW 2007,AUSTRALIA
[3] LATVIAN STATE UNIV,INST SOLID STATE PHYS,LV-1063 RIGA,LATVIA
[4] LOS ALAMOS NATL LAB,DIV THEORET,LOS ALAMOS,NM 87544
基金
瑞典研究理事会;
关键词
electrochromism; thin films; sputtering; angular selective transmittance;
D O I
10.1016/0167-2738(96)00222-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We summarize some recent work related to electrochromic tungsten-oxide-based thin films. The electronic structure of crystalline cubic (perovskite) WO3 and HWO3 was calculated from first principles. It was found, that hydroxide formation was energetically favoured. Experimental studies were made on heavily disordered films prepared by reactive magnetron sputtering in Ar + O-2 with and without CF4 addition and substrate bias. Structural studies, indicated that the electron bombardment associated with a positive substrate bias led to grain growth and partial crystallization while maintaining a high density of W=O double bonds presumably on grain boundaries. Tandem films, with a thin protective layer of electron bombarded oxide covering a thicker oxyfluoride layer, were able to combine rapid dynamics of the electrochromism with good electrochemical durability. Oblique angle sputtering in Ar + O-2 led to films whose microstructure comprised inclined columns. Pronounced angular selective transmittance was found to coexist with electrochromism.
引用
收藏
页码:943 / 948
页数:6
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