ELECTROCHROMISM IN TUNGSTEN OXYFLUORIDE FILMS MADE BY CHEMICALLY ENHANCED DC SPUTTERING

被引:16
作者
AZENS, A [1 ]
STJERNA, B [1 ]
GRANQVIST, CG [1 ]
GABRUSENOKS, J [1 ]
LUSIS, A [1 ]
机构
[1] UNIV LATVIA,INST SOLID STATE PHYS,RIGA 1063,LATVIA
关键词
D O I
10.1063/1.112842
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tungsten oxyfluoride films were prepared by reactive dc sputtering in plasmas containing O2 + CF4.. The deposition rate was large, particularly when chemical sputtering was promoted by heating the target. The films could show large charge insertion/extraction and high coloration efficiency. (C) 1994 American Institute of Physics.
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页码:1998 / 2000
页数:3
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