Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method

被引：13

作者：

Lee, CT ^{[1
]}

Lee, HY

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

[2] Natl Huwei Univ Sci & Technol, Inst Electroopt & Mat Sci, Yunlin 632, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 02期

关键词：

GaAs; InAlGaP; metal-semiconductor-metal photodetectors (MSM-PDs); oxide passivation layer; photoelectrochemical (PEC) oxidation method;

D O I：

10.1109/LPT.2004.839447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs, using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.

引用

页码：462 / 464

页数：3

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