Noninteracting electrons and the metal-insulator transition in two dimensions with correlated impurities

被引:39
作者
Hilke, M [1 ]
机构
[1] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1103/PhysRevLett.91.226403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
While standard scaling arguments show that a system of noninteracting electrons in two dimensions and in the presence of uncorrelated disorder is insulating, in this paper we discuss the case where interimpurity correlations are included. We find that for pointlike impurities and an infinite interimpurity correlation length, a mobility edge exists in 2D even if the individual impurity potentials are random. In the uncorrelated system we recover the scaling results, while in the intermediate regime for length scales comparable to the correlation length, the system behaves like a metal but with increasing fluctuations, before strong localization eventually takes over for length scales much larger than the correlation length. In the intermediate regime, the relevant length scale is given by the interimpurity correlation length, with important consequences for high mobility systems.
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页数:4
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共 23 条
[21]   Influence of long-range disorder on electron motion in two dimensions [J].
Taras-Semchuk, D ;
Efetov, KB .
PHYSICAL REVIEW B, 2001, 64 (11)
[22]   Anisotropic disorder in high-mobility 2D heterostructures and its correlation to electron transport [J].
Willett, RL ;
Hsu, JWP ;
Natelson, D ;
West, KW ;
Pfeiffer, LN .
PHYSICAL REVIEW LETTERS, 2001, 87 (12) :126803-126803
[23]   Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs [J].
Yoon, J ;
Li, CC ;
Shahar, D ;
Tsui, DC ;
Shayegan, M .
PHYSICAL REVIEW LETTERS, 2000, 84 (19) :4421-4424