Magnetic ground state of a thin-film element

被引:96
作者
Rave, W
Hubert, A
机构
[1] Inst Festkorper & Werkstofforsch, Dresden, Germany
[2] Univ Erlangen Nurnberg, Inst Werkstoffwissensch, D-91058 Erlangen, Germany
关键词
benchmark; numerical micromagnetics; standard problems; thin-film elements;
D O I
10.1109/20.914337
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By means of three-dimensional numerical calculations we studied possible micromagnetic configurations in a rectangular Permalloy-like thin-film element. The parameters were chosen to be compatible with the so-called micromagnetic standard problem 1. We demonstrate that for these parameters a diamond domain pattern is the lowest energy state that replaces cross-tie patterns favorable in larger elements. Only at smaller sizes does the originally envisaged Landau pattern form the ground state. The transition to high-remanence structures (or what would be comparable to a ''single-domain" state) is found for lateral sizes that are an order of magnitude smaller than the benchmark parameters. The transitions among the different domain patterns become plausible in view of the energy of symmetric Neel walls in extended thin films. The features of the high-remanence structures cars be derived from the principle of uniform charge distribution.
引用
收藏
页码:3886 / 3899
页数:14
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