Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix

被引：54

作者：

Bai, S ^{[1
]}

Devaty, RP

Choyke, WJ

Kaiser, U

Wagner, G

MacMillan, MF

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[2] Univ Jena, Inst Festkorperphys, D-6900 Jena, Germany

[3] Inst Kristallzuchtung, Berlin, Germany

[4] Dow Corning Corp, Compound Semicond, Tampa, FL USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期

关键词：

D O I：

10.1063/1.1618020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a low-temperature photoluminescence study of 4H/3C/4H-SiC single quantum wells. A quantum well consists of thirteen 3C-SiC bilayers as displayed in a high-resolution transmission electron microscope image. The optical emission energy of the quantum well is more than 200 meV below the exciton band gap of bulk 3C-SiC. A strong internal electric field on the order of 1 MV/cm leads to the large redshift of the emission energy due to the quantum-confined Stark effect. The origin of this field is discussed in terms of the spontaneous polarization difference between 3C- and 4H-SiC. (C) 2003 American Institute of Physics.

引用

页码：3171 / 3173

页数：3

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