Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor

被引：36

作者：

Bai, S ^{[1
]}

Wagner, G

Shishkin, E

Choyke, WJ

Devaty, RP

Zhang, M

Pirouz, P

Kimoto, T

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[2] Inst Kristallzuchtung, Berlin, Germany

[3] Case Western Reserve Univ, Cleveland, OH 44106 USA

[4] Kyoto Univ, Kyoto, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

hot-wall CVD; photoluminescence; polytypes; stacking faults;

D O I：

10.4028/www.scientific.net/MSF.389-393.589

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Eight intrinsic exciton spectra with band gaps ranging from 3.03 to 2.672 eV are found due to embedded in 4H SiC homoepitaxial films grown in hot-wall reactors. A correlation is found between the appearance of these embedded spectra and reduced lifetime as well as electron microscopic evidence for stacking faults.

引用

页码：589 / 592

页数：4