The growth of small diameter silicon nanowires to nanotrees

被引：50

作者：

Gentile, P. ^{[1
]}

David, T. ^{[1
]}

Dhalluin, F. ^{[2
,3
]}

Buttard, D. ^{[1
]}

Pauc, N. ^{[1
]}

Den Hertog, M. ^{[4
]}

Ferret, P. ^{[2
]}

Baron, T. ^{[3
]}

机构：

[1] CEA Grenoble, INAC, SP2M, SiNaPS, F-38054 Grenoble, France

[2] CEA DRT, LETI, DOPT, SIONA,LPS, F-38054 Grenoble, France

[3] CNRS, LTM, F-38054 Grenoble, France

[4] CEA Grenoble, INAC, SP2M, LEMMA, F-38054 Grenoble, France

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 12期

关键词：

Density (specific gravity) - Deposition - Growth rate - Growth temperature - Nanocrystalline silicon;

D O I：

10.1088/0957-4484/19/12/125608

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we have studied a way to control the growth of small diameter silicon nanowires by the vapour-liquid-solid (VLS) mode. We have developed a method to deposit colloids with good density control, which is a key point for control of the nanowire (NW) diameter. We also show the high dependence of the allowed growth diameter on the growth conditions, opening the door to the realization of as-grown 2 nm silicon NWs. Finally we have developed a smart way to realize nanotrees in the same run, by tuning the growth conditions and using gold on the sidewall of nanowires, without the need for two catalyst deposition steps.

引用

页数：5

共 12 条

[1] Retarded oxidation of Si nanowires [J].

Buettner, C. C. ;

Zacharias, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[2] THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].

DELERUE, C ;

ALLAN, G ;

LANNOO, M .

PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036

[3]

DENHERTOG MI, 2007, I PHYS C SER MICROSC

[4] Critical condition for growth of silicon nanowires [J].

Dhalluin, Florian ;

Desre, Pierre J. ;

den Hertog, Martien I. ;

Rouviere, Jean-Luc ;

Ferret, Pierre ;

Gentile, Pascal ;

Baron, Thierry .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)

[5] Position-controlled interconnected InAs nanowire networks [J].

Dick, Kimberly A. ;

Deppert, Knut ;

Karlsson, Lisa S. ;

Seifert, Werner ;

Wallenberg, L. Reine ;

Samuelson, Lars .

NANO LETTERS, 2006, 6 (12) :2842-2847

[6] The influence of the surface migration of gold on the growth of silicon nanowires [J].

Hannon, JB ;

Kodambaka, S ;

Ross, FM ;

Tromp, RM .

NATURE, 2006, 440 (7080) :69-71

[7] Synthesis and structural characterization of single-crystalline branched nanowire heterostructures [J].

Jung, Yeonwoong ;

Ko, Dong-Kyun ;

Agarwal, Ritesh .

NANO LETTERS, 2007, 7 (02) :264-268

[8]

NOE P, 2007, J APPL PHYS, V102, P1

[9] Diameter-dependent growth direction of epitaxial silicon nanowires [J].

Schmidt, V ;

Senz, S ;

Gösele, U .

NANO LETTERS, 2005, 5 (05) :931-935

[10] How nanowires grow [J].

Schmidt, Volker ;

Goesele, Ulrich .

SCIENCE, 2007, 316 (5825) :698-699

← 1 2 →