Electrochemical grafting of molecules to a silicon surface

被引：23

作者：

Ozanam, F ^{[1
]}

Vieillard, C ^{[1
]}

Warntjes, M ^{[1
]}

Dubois, T ^{[1
]}

Pauly, M ^{[1
]}

Chazalviel, JN ^{[1
]}

机构：

[1] Ecole Polytech, Phys Mat Condensee Lab, CNRS, F-91128 Palaiseau, France

来源：

CANADIAN JOURNAL OF CHEMICAL ENGINEERING | 1998年 / 76卷 / 06期

关键词：

D O I：

10.1002/cjce.5450760608

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

The hydrogentated surface of silicon exhibits remarkable properties, but poor resistance to oxidation. To improve its stability, surface hydrogen has been replaced by several organic groups. Such grafting can be carried out chemically by a multi-step reaction scheme. However, an electrochemical approach allows direct reaction with the hydrogenated surface. The porous-silicon surface has been partially methoxylated by a controlled anodic dissolution. If has also been methylated using a non-destructive anodic process, with a yield of 80%, limited only by steric hindrance. The methylated surface of porous silicon exhibits a stability against oxidation increased by an order of magnitude.

引用

页码：1020 / 1026

页数：7

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