Low temperature wafer bonding for thin silicon film transfer

被引：18

作者：

Goustouridis, D ^{[1
]}

Minoglou, K

Kolliopoulou, S

Chatzandroulis, S

Morfouli, P

Normand, P

Tsoukalas, D

机构：

[1] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece

[2] ENSERG, F-38016 Grenoble, France

[3] Natl Tech Univ Athens, Dept Appl Sci, Athens 15780, Greece

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2004年 / 110卷 / 1-3期

关键词：

silicon wafer bonding; low temperature bonding; bond strength; plasma activation; silicon-on-insulator (SOI);

D O I：

10.1016/j.sna.2003.09.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we investigate the low temperature (<200 degreesC) wafer bonding using wet chemical surface activation and we demonstrate high bonding strength sufficient to achieve the transfer of a thin silicon film of thickness less than 400 nm on top of another silicon wafer using spin-on-glass (SOG) film as an intermediate layer. The process developed is the first critical step that can enable three-dimensional (3D) integration and wafer level packaging of MEMS with electronic circuits. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：401 / 406

页数：6

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