Electron and hole escape times in single quantum wells

被引:7
作者
Lefebvre, KR
Anwar, AFM
机构
[1] Dept. of Elec. and Syst. Engineering, University of Connecticut, Storrs
关键词
D O I
10.1063/1.363272
中图分类号
O59 [应用物理学];
学科分类号
摘要
The calculation of the carrier escape time is important for quantum well devices. In this article a model for calculating the escape time of both electrons and holes is presented. The escape time is found by solving the Schrodinger equation by the method of the logarithmic derivative of the wave function which yields: the continuum density of states within a biased quantum well, the proper group velocity, and the partitioning between the thermionic emission and tunneling currents. Excellent agreement between the theoretical and previously reported experimental results for electron and hole escapee times is achieved. (C) 1996 American Institute of Physics.
引用
收藏
页码:3595 / 3597
页数:3
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