STEADY-STATE CARRIER ESCAPE FROM SINGLE QUANTUM-WELLS

被引：131

作者：

NELSON, J ^{[1
]}

PAXMAN, M ^{[1
]}

BARNHAM, KWJ ^{[1
]}

ROBERTS, JS ^{[1
]}

BUTTON, C ^{[1
]}

机构：

[1] UNIV SHEFFIELD,SERC III-V FAC,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the variation in dc photocurrent with bias and temperature from GaAs-AlxGa1-xAs single quantum wells embedded in p-i-n diodes, and we find that the observed temperature response shows Arrhenius behavior with a field-dependent activation energy close to the hole well depth. This can be accounted for using a model based on the competition between photocarrier escape and recombination. Using reasonable values for the diode's built-in voltage and the quantum-well recombination lifetime we achieve good quantitative agreement between theory and experiment if we assume that the recombination rate is governed by the fastest escaping carriers which are light holes in our devices.

引用

页码：1460 / 1468

页数：9

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