Transport in polycrystalline polymer thin-film transistors

被引：290

作者：

Street, RA ^{[1
]}

Northrup, JE ^{[1
]}

Salleo, A ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.71.165202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe a transport model for ordered polymer semiconductors that considers the physical and electronic structure, including the effects of hole delocalization in ordered lamella, grain boundary structures, a two-dimensional density of states, and percolation effects related to transport dimensionality. Simple model calculations are compared to experiments on regioregular polythiophene.

引用

页数：13

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