Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3

被引：392

作者：

Checkelsky, J. G. ^{[1
]}

Hor, Y. S. ^{[2
]}

Cava, R. J. ^{[2
]}

Ong, N. P. ^{[1
]}

机构：

[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[2] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 19期

基金：

美国国家科学基金会;

关键词：

BI2TE3; LIMIT; FIELD;

D O I：

10.1103/PhysRevLett.106.196801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi2Se3 in an electric field effect geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage V-g. We find that the temperature T and magnetic field dependent transport properties in the vicinity of this Vg can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high-mobility metallic channel that dominates at low T. The conductance (approximately 2 X 7e(2)= h), weak antilocalization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for electric field effect topological insulator devices at room temperature.

引用

页数：4

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