Theoretical modeling of nonequilibrium optical phonons and electron energy relaxation in GaN

被引：32

作者：

Tsai, CY ^{[1
]}

Chen, CH

Sung, TL

Tsai, CY ^{[1
]}

Rorison, JM

机构：

[1] De Montfort Univ, Dept Elect & Elect Engn, Leicester LE1 9BH, Leics, England

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1UB, Avon, England

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.369277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The decay of the zone-center longitudinal optical (TO) phonon in GaN into a transverse optical (TO) phonon and a longitudinal acoustic (LA) phonon is theoretically investigated. Its decay into two LA phonons is forbidden. A theoretical model is presented to study the effect of nonequilibrium LO and TO phonons on the electron energy relaxation rate. The electron energy relaxation time is calculated, and its value is shown to strongly depend on the finite lifetimes of both LO and TO phonons. The individual contributions of A(1) mode and E-1 mode optical phonons in the overall electron energy relaxation processes are also discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)11003-X].

引用

页码：1475 / 1480

页数：6

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