Subpicosecond switch-off and switch-on of a semiconductor laser due to transient hot carrier effects

被引:28
作者
Elsasser, M
Hense, SG
Wegener, M
机构
[1] Institut für Angewandte Physik, D-76128 Karlsruhe
关键词
D O I
10.1063/1.118223
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recently it has been shown that perturbation of an already operating semiconductor laser with an additional pump pulse may lead to an unusual ultrafast switch-off. This effect is due to transient carrier heating. Subsequent carrier cooling allows for switch-on after about two picoseconds. In vertical cavity lasers containing only a few quantum wells as the active medium, the recovery, however, is limited by the comparatively low gain in the cavity. Here we demonstrate experimentally that both switch-off and switch-on can exhibit subpicosecond time constants if a bulk semiconductor is used as the active medium. (C) 1997 American Institute of Physics.
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页码:853 / 855
页数:3
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