GAIN SWITCHING IN HIGH-SPEED SEMICONDUCTOR-LASERS - INTERMEDIATE-SIGNAL ANALYSIS

被引：5

作者：

SCHNEIDER, H ^{[1
]}

RALSTON, JD ^{[1
]}

OREILLY, EP ^{[1
]}

WEISSER, S ^{[1
]}

LARKINS, EC ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.113016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a simple analytical treatment of gain switching in semiconductor lasers at intermediate intensities, based on a second-order perturbative treatment of the rate equations. The analytical solution is compared with experimental nonlinear transient relaxation oscillations measured using high-speed, p-doped In0.35Ga0.65As/GaAs multiple quantum well lasers, under perturbation of the dc electrical bias by pulsed optical excitation. The experimental results show excellent agreement with the analytical solution, even at excitation densities beyond the small-signal regime.

引用

页码：661 / 663

页数：3

共 9 条

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