ALPHA-FACTOR IMPROVEMENTS IN HIGH-SPEED P-DOPED IN0.35GA0.65AS/GAAS MQW LASERS

被引:11
作者
SCHONFELDER, A [1 ]
WEISSER, S [1 ]
RALSTON, JD [1 ]
ROSENZWEIG, J [1 ]
机构
[1] UNIV KARLSRUHE,INST HOCHFREQUENZTECH & QUANTENELEKTRON,D-76128 KARLSRUHE,GERMANY
关键词
LASERS; SEMICONDUCTOR LASERS;
D O I
10.1049/el:19931121
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors investigate experimentally for the first time the improvements in the linewidth enhancement factor, alpha, resulting from simultaneous addition of strain and p-doping in high-speed GaAs-based multiquantum well lasers. The a factor is determined from measured changes in both gain and refractive index as a function of CW bias current, yielding a 3.1 and 1.4 at the threshold lasing wavelength for unstrained GaAs/Al0.25Ga0.75As and p-doped strained In0.3,Ga0.65As/GaAs devices, respectively.
引用
收藏
页码:1685 / 1686
页数:2
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