P-DOPANT INCORPORATION AND INFLUENCE ON GAIN AND DAMPING BEHAVIOR IN HIGH-SPEED GAAS-BASED STRAINED MQW LASERS

被引：7

作者：

RALSTON, JD

WEISSER, S

ESQUIVIAS, I

SCHONFELDER, A

LARKINS, EC

ROSENZWEIG, J

TASKER, PJ

MAIER, M

FLEISSNER, J

机构：

[1] Fraunhofer-Institut für Angewandte Festkörperphysik, D-79108 Freiburg

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 2-3期

关键词：

D O I：

10.1016/0921-5107(93)90355-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate p-dopant incorporation and the influence of p-doping on the gain and damping behaviour in GaAs-based strained multiple quantum well lasers. By adding 5 x 10(18)-2 x 10(19) cm(-3) beryllium doping to the active region of In0.35Ga0.65As/GaAs strained multiple quantum well lasers (4 QW's), we are able to demonstrate both very efficient high-speed modulation (20 GHz at a DC bias current of 50 mA) and the first semiconductor lasers to achieve a direct modulation bandwidth of 30 GHz under DC bias (heat-sink temperature = 25 degrees C).

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收藏

页码：232 / 236

页数：5

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