Photoinduced electrochemical deposition of Cu on p-type Si substrates -: art. no. 035334

被引：15

作者：

Scheck, C

Liu, YK

Evans, P

Schad, R

Bowers, A

Zangari, G

Williams, JR

Issacs-Smith, TF

机构：

[1] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA

[2] USAF, Res Labs, Hanscom AFB, MA 01731 USA

[3] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

[4] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[5] Auburn Univ, Space Res Inst, Leach Sci Ctr 231, Auburn, AL 36849 USA

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.69.035334

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The process of photoinduced electrochemical deposition of Cu structures on p-type Si substrates by local illumination with a focused laser beam is studied. The lateral dimensions of the structures formed are found to decrease with reduced laser wavelength or intensity but are independent of the duration of the illumination. Shorter minority carrier lifetimes in the semiconductor substrate lead to a further reduction of structure dimensions. The effect of spontaneous background precipitation on the Si surface is studied as a function of solution composition. The optical reflectivity can be related to the fractal surface roughness.

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页数：8

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共 24 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[2] RELATION BETWEEN SURFACE ROUGHNESS AND SPECULAR REFLECTANCE AT NORMAL INCIDENCE [J].

BENNETT, HE ;

PORTEUS, JO .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1961, 51 (02) :123-+

[3] SELECTIVE METAL-DEPOSITION ON SILICON SUBSTRATES [J].

CACHET, H ;

FROMENT, M ;

SOUTEYRAND, E ;

DENNIG, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (10) :2920-2925

[4] Copper deposition on HF etched silicon surfaces: Morphological and kinetic studies [J].

Chyan, OMR ;

Chen, JJ ;

Chien, HY ;

Sees, J ;

Hall, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (01) :92-96

[5] THE REFLECTION OF ELECTROMAGNETIC WAVES FROM A ROUGH SURFACE [J].

DAVIES, H .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1954, 101 (07) :209-214

[6] Submicron nickel deposition on silicon from an electrolytic solution controlled by near-field optics [J].

Diesinger, H ;

Bsiesy, A ;

Hérino, R .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) :4862-4864

[7] LASER SPOT SCANNING IN PHOTOELECTROCHEMICAL SYSTEMS, RELATION BETWEEN SPOT SIZE AND SPATIAL-RESOLUTION OF THE PHOTOCURRENT [J].

ERIKSSON, S ;

CARLSSON, P ;

HOLMSTROM, B ;

UOSAKI, K .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2324-2327

[8] Electrochemical investigation of copper contamination on silicon wafers from HF solutions [J].

Jeon, JS ;

Raghavan, S ;

Parks, HG ;

Lowell, JK ;

Ali, I .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (09) :2870-2875

[9] LASER-INDUCED METAL-DEPOSITION ON INP [J].

KARLICEK, RF ;

DONNELLY, VM ;

COLLINS, GJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1084-1090

[10] LASER-INDUCED ELECTRODEPOSITION OF TRANSITION-METALS ON SILICON [J].

KAUTEK, W ;

SORG, N ;

PAATSCH, W .

ELECTROCHIMICA ACTA, 1991, 36 (11-12) :1799-1801