Photoinduced electrochemical deposition of Cu on p-type Si substrates -: art. no. 035334

被引：15

作者：

Scheck, C

Liu, YK

Evans, P

Schad, R

Bowers, A

Zangari, G

Williams, JR

Issacs-Smith, TF

机构：

[1] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA

[2] USAF, Res Labs, Hanscom AFB, MA 01731 USA

[3] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

[4] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[5] Auburn Univ, Space Res Inst, Leach Sci Ctr 231, Auburn, AL 36849 USA

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.69.035334

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The process of photoinduced electrochemical deposition of Cu structures on p-type Si substrates by local illumination with a focused laser beam is studied. The lateral dimensions of the structures formed are found to decrease with reduced laser wavelength or intensity but are independent of the duration of the illumination. Shorter minority carrier lifetimes in the semiconductor substrate lead to a further reduction of structure dimensions. The effect of spontaneous background precipitation on the Si surface is studied as a function of solution composition. The optical reflectivity can be related to the fractal surface roughness.

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页数：8

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