Selective deposition of thin copper films onto silicon with improved adhesion

被引：64

作者：

Magagnin, L ^{[1
]}

Maboudian, R ^{[1
]}

Carraro, C ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2001年 / 4卷 / 01期

关键词：

D O I：

10.1149/1.1344280

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel copper deposition method has been developed to plate silicon surfaces. Continuous copper films are obtained galvanically on p- or n-type, single- or polycrystalline silicon. The films possess homogeneous structure, smooth surface, and improved adhesion to the substrate. The plating bath comprises an aqueous solution containing a copper compound, ascorbic acid, ammonium fluoride, and an antistress agent. With this process, the use of seed layers to improve adhesion between metal and semiconductor is avoided. (C) 2000 The Electrochemical Society. S1099-0062(00)07-069-3. All rights reserved.

引用

页码：C5 / C7

页数：3

共 16 条

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