Selective deposition of a thin copper film for metallization on silicon by the chemical bath process

被引：10

作者：

Dhingra, S ^{[1
]}

Sharma, R

George, PJ

机构：

[1] Kurukshetra Univ, USIC, Dept Instrumentat, Kurukshetra 136119, Haryana, India

[2] Kurukshetra Univ, Dept Elect Sci, Kurukshetra 136119, Haryana, India

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 12期

关键词：

D O I：

10.1016/S0038-1101(99)00200-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently copper as metallization for contact and interconnect in VLSI is attracting attention. In this study, copper has been selectively deposited over defined areas on glass and silicon using the chemical bath deposition technique. A continuous copper film with a resistivity of 1.81 mu Omega cm for 6000 Angstrom thickness is formed. The rate of deposition and the film resistivity are studied. The deposition process and its characteristics are discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：2231 / 2234

页数：4

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