ALUMINUM METALLIZATION-ADVANTAGES AND LIMITATIONS FOR INTEGRATED CIRCUIT APPLICATIONS

被引：33

作者：

SCHNABLE, GL

KEEN, RS

机构：

[1] Microelectronics Division of Philco-Ford Corporation, Blue Bell, Pa

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 09期

关键词：

D O I：

10.1109/PROC.1969.7338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The advantages and limitations of aluminum metallization are reviewed and compared with other systems used for integrated circuits. Metallization system properties of particular importance are summarized. including initial physical and chemical properties of the system which define potential performance and reliability considerations. The special requirements for MOS arrays and for multilevel-metallized integrated circuits are described. Recently available knowledge of aluminum metallization process technology and of metallization-related failure mechanisms is’ re-viewed, and new results of experimental studies are presented. It is concluded that aluminum will continue to be the most widely used metallization material not only for single-level metallized integrated circuits but also for multilevel LSI arrays. © 1969 IEEE. All rights reserved.

引用

页码：1570 / +

页数：1

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