ELECTROLESS CU FOR VLSI

被引：68

作者：

CHO, JSH ^{[1
]}

KANG, HK ^{[1
]}

WONG, SS ^{[1
]}

SHACHAMDIAMAND, Y ^{[1
]}

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1557/S0883769400047308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：31 / 38

页数：8

共 15 条

[1] CHO JSH, 1991, VLSI TECH S SLIDE S, P37
[2] CHO JSH, 1991, VLSI TECH S, P39
[3] INTERCONNECTION AND ELECTROMIGRATION SCALING THEORY
GARDNER, DS
MEINDL, JD
SARASWAT, KC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 633 - 643
[4] ELECTROMIGRATION PROPERTIES OF ELECTROLESS PLATED CU METALLIZATION
KANG, HK
CHO, JSH
WONG, SS
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (09) : 448 - 450
[5] KIANG MH, 1992, APPL PHYS LETT, V60, P2967
[6] Ohmi T., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P285, DOI 10.1109/IEDM.1991.235447
[7] PAI PL, 1989, VMIC, P258
[8] ACTIVATION-ENERGY FOR ELECTROMIGRATION IN CU FILMS
PARK, CW
VOOK, RW
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (02) : 175 - 177
[9] Paunovic M., 1968, PLATING, V55, P1161
[10] OPTICAL AND ELECTRON-BEAM LITHOGRAPHY FOR ELECTROLESS COPPER MULTILEVEL METALLIZATION
SHACHAMDIAMAND, Y
ANGYAL, M
DEDHIA, A
NASIR, Q
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2958 - 2961