ELECTROMIGRATION PROPERTIES OF ELECTROLESS PLATED CU METALLIZATION

被引：21

作者：

KANG, HK

CHO, JSH

WONG, SS

机构：

[1] Center for Integrated Systems, Stanford University, Stanford

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期

关键词：

D O I：

10.1109/55.192790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electromigration properties of electroless plated copper films have been evaluated under dc stress condition. The formation of microvoids and the diffusion of copper through the seed layer caused an increase of the line resistance in the initial stage of the stressing. The current density dependence and the activation energy of the lifetime were determined.

引用

页码：448 / 450

页数：3

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