ACTIVATION-ENERGY FOR ELECTROMIGRATION IN CU FILMS

被引：78

作者：

PARK, CW

VOOK, RW

机构：

[1] Laboratory for Solid State Science and Technology, Physics Department, Syracuse University, Syracuse

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.106011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper is a possible substitute for Al in very large scale integration interconnects because of its higher resistance to electromigration damage (EMD) and its lower electrical resistivity. In the present work, we report on electrical resistance measurements of the activation energy for EMD in Cu films as determined by an isothermal annealing method carried out under high vacuum conditions. Temperature measurement and control were accomplished by means of a Cu thin-film thermistor. The activation energy for EMD of evaporated Cu films was found to be 0.79 +/- 0.02 eV.

引用

页码：175 / 177

页数：3

共 10 条

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