Ion beam doping of silicon nanowires

被引：81

作者：

Colli, Alan ^{[1
]}

Fasoli, Andrea ^{[2
]}

Ronning, Carsten ^{[3
]}

Pisana, Simone ^{[2
]}

Piscanec, Stefano ^{[2
]}

Ferrari, Andrea C. ^{[2
]}

机构：

[1] Nokia Res Ctr Cambridge UK, Nanosci Ctr, Cambridge CB3 0FF, England

[2] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

[3] Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

来源：

NANO LETTERS | 2008年 / 8卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1021/nl080610d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm(-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amount of amorphization and structural disorder, as shown by electrical transport and Raman measurements. We demonstrate that a fully crystalline structure can be recovered by thermal annealing at 800 degrees C. For not-annealed, as-implanted NWs, we correlate the onset of amorphization with an increase of phonon confinement in the NW core. This is ion-dependent and detectable for P-implantation only. Hysteresis is observed following both P and B implantation.

引用

页码：2188 / 2193

页数：6

共 42 条

[1] Scanning photocurrent imaging and electronic band studies in silicon nanowire field effect transistors [J].

Ahn, Y ;

Dunning, J ;

Park, J .

NANO LETTERS, 2005, 5 (07) :1367-1370

[2]

[Anonymous], The Stopping and Range of Ions in Matter

[3] The digital evolution [J].

Barrett, Craig R. .

MRS BULLETIN, 2006, 31 (11) :906-913

[4] RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON [J].

BERMEJO, D ;

CARDONA, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :405-419

[5]

Bruesch P., 2012, Phonons: Theory and Experiments I: Lattice Dynamics and Models of Interatomic Forces

[6] Synthesis and postgrowth doping of silicon nanowires [J].

Byon, K ;

Tham, D ;

Fischer, JE ;

Johnson, AT .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[7] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].

CAMPBELL, IH ;

FAUCHET, PM .

SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741

[8] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES [J].

CERDEIRA, F ;

FJELDLY, TA ;

CARDONA, M .

PHYSICAL REVIEW B, 1973, 8 (10) :4734-4745

[9]

CHANDRASEKHAR M, 1978, PHYS REV B, V17, P1628

[10] Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain [J].

Cohen, G. M. ;

Rooks, M. J. ;

Chu, J. O. ;

Laux, S. E. ;

Solomon, P. M. ;

Ott, J. A. ;

Miller, R. J. ;

Haensch, W. .

APPLIED PHYSICS LETTERS, 2007, 90 (23)

← 1 2 3 4 5 →