Influence of sputtering pressure on the structure and properties of ZrO2 films prepared by rf reactive sputtering

被引：54

作者：

Gao, PT

Meng, LJ ^{[1
]}

dos Santos, MP

Teixeira, V

Andritschky, M

机构：

[1] Univ Minho, Dept Fis, P-4710 Braga, Portugal

[2] Inst Super Engn Porto, Dept Fis, P-4200 Porto, Portugal

来源：

APPLIED SURFACE SCIENCE | 2001年 / 173卷 / 1-2期

关键词：

thin films; ZrO2; sputtering;

D O I：

10.1016/S0169-4332(00)00888-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zirconium oxide (ZrO2) films have been prepared by rf reactive magnetron sputtering at different sputtering pressures. It is found that the monoclinic phase is the dominant phase in the films and there is a small fraction of tetragonal phase in the films prepared in the low pressure region. The influence of sputtering pressure on the microstructure. residual stress and optical properties of the films has been studied. The films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM). energy dispersive X-ray (EDX) and optical spectroscopy. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：84 / 90

页数：7