Performance evaluation of a Schottky SiC power diode in a boost PFC application

被引：81

作者：

Spiazzi, G ^{[1
]}

Buso, S ^{[1
]}

Citron, M ^{[1
]}

Corradin, M ^{[1
]}

Pierobon, R ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2003年 / 18卷 / 06期

关键词：

EMI; PFC; SiC diodes;

D O I：

10.1109/TPEL.2003.818821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of a 600 V, 4 A silicon carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated. A 300 W boost power factor corrector (PFC) with average current mode control is considered as a key application. Measurements of overall efficiency, switch and diode losses, and conducted electromagnetic interference (EMI) are performed both with the SiC diode and with two ultra-fast, soft-recovery, silicon power diodes, namely the RURD460 and the recently presented STTH5R06D The paper compares the results to quantify the impact of the recovery current reduction provided by SiC diode on these key aspects of the converter behavior. Based on the experimental results, the paper shows that the use of SiC diodes in PFC designs may only be justified in high switching frequency applications.

引用

页码：1249 / 1253

页数：5

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