High voltage SiC diodes with small recovery time

被引：23

作者：

Levinshtein, ME

Mnatsakanov, TT

Ivanov, PA

Palmour, JW

Rumyantsev, SL

Singh, R

Yurkov, SN

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] All Russian Electrotech Inst, Moscow 111250, Russia

[3] Cree Inc, Durham, NC 27703 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 14期

关键词：

D O I：

10.1049/el:20000849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC diodes with 6 kV blocking capability, low forward voltage drop (4.2V at 100A/cm(2), 5.8V at 500A/cm(2)), and very small recovery time (less than or equal to 7ns) have been demonstrated for the first time. Experimental results can be explained by the combination of high Lifetime across the major part of the base and the presence near the metallurgical boundary of the p(+)n junction of a thin layer with a very small carrier lifetime.

引用

页码：1241 / 1242

页数：2

共 9 条

[1] Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities [J].