ACCURATE SIMULATION OF FAST-ION IRRADIATED POWER DEVICES

被引：28

作者：

HAZDRA, P

VOBECKY, J

机构：

[1] Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 01期

关键词：

D O I：

10.1016/0038-1101(94)90116-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach to simulation of a device that is subject to low-dose high-energy ion irradiation is presented with regard to different energy magnitudes, dose and temperature of subsequent annealing. The procedure utilizes an ion-implantation process simulator, an expert system based on experiment, and a 1-D device simulator with an improved model of thermal generation/recombination. Measured and simulated spatial distribution of minority carrier lifetime within a GTO thyristor provided rigorous system verification. The results of proton and helium irradiation are compared from the standpoint of the ON-state spatial distribution of excess carriers in a high-power thyristor. The forward voltage drop is shown as a function of dose, energy and annealing temperature. The influence of ion irradiation on the simulated trade-off between voltage drop and reverse recovery time of a high-power diode is likewise discussed considering the soft-factor and the reverse current.

引用

页码：127 / 134

页数：8

共 13 条

[1] CARRIER LIFETIMES IN SEMICONDUCTORS WITH 2 INTERACTING OR 2 INDEPENDENT RECOMBINATION LEVELS [J].