THE INFLUENCE OF IMPLANTATION TEMPERATURE AND SUBSEQUENT ANNEALING ON RESIDUAL IMPLANTATION DEFECTS IN SILICON

被引：16

作者：

HAZDRA, P ^{[1
]}

HASLAR, V ^{[1
]}

BARTOS, M ^{[1
]}

机构：

[1] TECH UNIV PRAGUE, FAC ELECTR ENGN, ION IMPLANTAT LAB, CS-16627 PRAGUE 6, CZECHOSLOVAKIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96248-J

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The implantation of Si-28+ ions at different substrate temperatures ranging from 120 to 820 K into shallow p+ n junction structures was used for the study of ion implantation defects in n-type Si. The stability of the created defects was investigated using isochronal furnace annealing in the temperature range 370-820 K. The results of DLTS measurements were compared with measured reverse I-V characteristics. The results show the dominant role of thermally stimulated dissociation and the production of secondary defects involving vacancies. These processes are significantly influenced both by implantation temperature and by the subsequent transient to room temperature.

引用

页码：637 / 641

页数：5

共 10 条

[1] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].