STUDY OF DEFECTS IN SILICON AFTER LOW-ENERGY H+ IMPLANTATION BY DLTS MEASUREMENTS

被引：9

作者：

KRYNICKI, J

MULLER, JC

SIFFERT, P

BRYLOWSKA, I

PAPROCKI, K

机构：

[1] MARIE CURIE SKLODOWSKA UNIV,INST PHYS,PL-20033 LUBLIN,POLAND

[2] INST NUCL CHEM & TECHNOL,WARSAW,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 100卷 / 01期

关键词：

D O I：

10.1002/pssa.2211000128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：245 / 249

页数：5

共 15 条

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[2]

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APPLIED PHYSICS LETTERS, 1977, 31 (09) :578-579

[5] DEFECT ANNEALING IN PHOSPHORUS IMPLANTED SILICON - DLTS STUDY [J].

KRYNICKI, J ;

BOURGOIN, JC .

APPLIED PHYSICS, 1979, 18 (03) :275-278

[6]

KRYNICKI J, IN PRESS

[7]

KRYNICKI J, 1979, P ICRPSRM TBILISI, P545

[8] ORIGIN OF THE DEFECTS OBSERVED AFTER LASER ANNEALING OF IMPLANTED SILICON [J].

MESLI, A ;

MULLER, JC ;

SALLES, D ;

SIFFERT, P .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :159-160

[9] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

[10]

MULLER JC, 1984, 1984 P IBMM C ITH, P304

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