DEFECT ANNEALING IN PHOSPHORUS IMPLANTED SILICON - DLTS STUDY

被引：16

作者：

KRYNICKI, J ^{[1
]}

BOURGOIN, JC ^{[1
]}

机构：

[1] UNIV PARIS 7,ECOLE NORM SUPER,PHYS SOLIDES GRP,CNRS LAB,F-75221 PARIS 05,FRANCE

来源：

APPLIED PHYSICS | 1979年 / 18卷 / 03期

关键词：

61.70E; 61.70T;

D O I：

10.1007/BF00885514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation are described. Four electron traps are found: at E c -0.21 eV, E c -0.39 eV, E c -0.52 eV and E c -0.58 eV and their cross-sections estimated. The annealing behaviour in the range 450-800°C of these traps is described. © 1979 Springer-Verlag.

引用

页码：275 / 278

页数：4

共 22 条

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