ELECTRON TRAP ANNEALING IN NEUTRON TRANSMUTATION DOPED SILICON

被引：15

作者：

GULDBERG, J

机构：

[1] TECH UNIV DENMARK,INST APPL PHYS 3,DK-2800 LYNGBY,DENMARK

[2] TECH UNIV DENMARK,SEMICOND TECHNOL LAB,DK-2800 LYNGBY,DENMARK

来源：

关键词：

D O I：

10.1063/1.89785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：578 / 579

页数：2

共 18 条

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[8]

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[9]

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[10]

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