ANNEALING OF IRRADIATION-INDUCED DEFECTS IN ARSENIC-DOPED SILICON

被引：38

作者：

EVWARAYE, AO ^{[1
]}

机构：

[1] GE,RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.323935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1840 / 1843

页数：4

共 12 条

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[7] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON [J].

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[8] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON .1. DONOR CONCENTRATION DEPENDENCE [J].

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[9]

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