ION-IMPLANTATION ASSOCIATED DEFECT PRODUCTION IN SILICON

[1] BENTON JL, 1980, LASER ELECTRON BEAM, P430

[2] BRICE DK, 1975, ION IMPLANTATION SEM, P399

[3] BRICE DK, 1973, ION IMPLANTATION SEM, P171

[4] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[5] ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3499 - &

[6] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617

[7] DEPTH DISTRIBUTION OF EPR CENTERS IN 400-KEV O+ ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 108 - &

[8] BROWER KL, 1977, ION IMPLANTATION SEM, P427

[9] CHENG LJ, 1974, P IEEE, V62, P1208

[10] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[1] BENTON JL, 1980, LASER ELECTRON BEAM, P430

[2] BRICE DK, 1975, ION IMPLANTATION SEM, P399

[3] BRICE DK, 1973, ION IMPLANTATION SEM, P171

[4] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[5] ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3499 - &

[6] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617

[7] DEPTH DISTRIBUTION OF EPR CENTERS IN 400-KEV O+ ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 108 - &

[8] BROWER KL, 1977, ION IMPLANTATION SEM, P427

[9] CHENG LJ, 1974, P IEEE, V62, P1208

[10] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +