INVESTIGATION OF THE EFFECT OF NONLINEAR PHYSICAL PHENOMENA ON CHARGE CARRIER TRANSPORT IN SEMICONDUCTOR-DEVICES

被引:79
作者
MNATSAKANOV, TT
ROSTOVTSEV, IL
PHILATOV, NI
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关键词
D O I
10.1016/0038-1101(87)90215-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:579 / 585
页数:7
相关论文
共 28 条
[1]  
ABRAMOV PI, 1981, RADIOELEKTRONIKA, V24, P59
[3]  
AVAKYANTS GM, 1969, PHISIKA, V4, P89
[4]   AUGER-RECOMBINATION IN SI [J].
BECK, JD ;
CONRADT, R .
SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95
[5]  
BLICHER A, 1976, THYRISTOR PHYSICS, P261
[6]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[7]  
CHOO SC, 1972, IEEE T ELECTRON DEV, VED19, P954
[8]   DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J].
DANNHAUSER, F .
SOLID-STATE ELECTRONICS, 1972, 15 (12) :1371-+
[9]   NUMERICAL-SIMULATION OF A FORWARD-BIASED P-I-N STRUCTURE WITH BAND-TO-BAND AUGER RECOMBINATION [J].
FREIDIN, B ;
VELMRE, E .
ELECTRONICS LETTERS, 1978, 14 (22) :701-703
[10]  
GREKHOV IV, 1974, RADIOTEKH ELEKTRON+, V19, P1483