NUMERICAL-SIMULATION OF A FORWARD-BIASED P-I-N STRUCTURE WITH BAND-TO-BAND AUGER RECOMBINATION

被引：3

作者：

FREIDIN, B

VELMRE, E

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 22期

关键词：

D O I：

10.1049/el:19780473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：701 / 703

页数：3

共 16 条

[1] AUGER-RECOMBINATION IN SI [J].

BECK, JD ;

CONRADT, R .

SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95

[2]

BLINOV LM, 1967, FIZ TVERD TELA, V9, P3221

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[4] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J].

FLETCHER, NH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06) :862-872

[5]

GREKHOV IV, 1977, FTP, V11, P1691

[6] BAND-TO-BAND AUGER RECOMBINATION IN INDIRECT GAP SEMICONDUCTORS [J].

HULDT, L .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01) :173-&

[7] AUGER RECOMBINATION IN SWAMPED MIDDLE REGION OF SILICON RECTIFIERS AND THYRISTORS [J].

KRAUSSE, J .

SOLID-STATE ELECTRONICS, 1974, 17 (05) :427-429

[8] BAND-TO-BAND AUGER RECOMBINATION IN SILICON AND GERMANIUM [J].

NILSSON, NG .

PHYSICA SCRIPTA, 1973, 8 (04) :165-176

[9] SPECTRUM AND DECAY OF RECOMBINATION RADIATION FROM STRONGLY EXCITED SILICON [J].

NILSSON, NG ;

SVANTESSON, KG .

SOLID STATE COMMUNICATIONS, 1972, 11 (01) :155-+

[10] INFLUENCE OF AUGER RECOMBINATION ON FORWARD CHARACTERISTIC OF SEMICONDUCTOR POWER RECTIFIERS AT HIGH-CURRENT DENSITIES [J].

NILSSON, NG .

SOLID-STATE ELECTRONICS, 1973, 16 (06) :681-688

← 1 2 →