INFLUENCE OF AUGER RECOMBINATION ON FORWARD CHARACTERISTIC OF SEMICONDUCTOR POWER RECTIFIERS AT HIGH-CURRENT DENSITIES

被引：27

作者：

NILSSON, NG ^{[1
]}

机构：

[1] ROY INST TECHNOL,PHYS DEPT III,STOCKHOLM 70,SWEDEN

来源：

关键词：

D O I：

10.1016/0038-1101(73)90111-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：681 / 688

页数：8

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