High hole lifetime (3.8μs) in 4H-SiC diodes with 5.5kV blocking voltage

被引：39

作者：

Ivanov, PA

Levinshtein, ME

Irvine, KG

Kordina, O

Palmour, JW

Rumyantsev, SL

Singh, R

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] Cree Res Inc, Durham, NC 27703 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 16期

关键词：

D O I：

10.1049/el:19990897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hole lifetime tau(p) in the n-base of 4H-SiC diodes with 5.5kV blocking voltage has been measured in the temperature range 300-550K. The tau(p) increases monotonically in this temperature range from 0.6 to 3.8 mu s. Forward current-voltage characteristics demonstrate a very high level of base modulation by minority carriers.

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页码：1382 / 1383

页数：2

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