Frequency properties of 4H-SiC thyristors at high current density

Frequency properties of 4H-SiC thyristors with forward blocking voltages of similar to 400 V and similar to 700 V have been investigated. The limiting operating frequency exceeds 500 kHz up to current densities of j congruent to 14000 A cm(-2) for 400 V structures and 750 A cm(-2) for 700 V structures. The experimentally measured limiting frequencies of 4H-SiC devices are compared with the theoretical estimations and the experimental data for rated Si thyristors.