Steady state current-voltage characteristics of 4H-SiC thyristors at high and superhigh current densities

被引：11

作者：

Levinshtein, ME ^{[1
]}

Palmour, JW ^{[1
]}

Rumyantsev, SL ^{[1
]}

Singh, R ^{[1
]}

机构：

[1] CREE RES INC,DURHAM,NC 27713

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 11期

关键词：

D O I：

10.1088/0268-1242/12/11/029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current-voltage characteristics of 4H-SiC thyristors with a blocking voltage of 400 V have been measured up to a current density j similar or equal to 7 x 10(4) A cm(-2) in the temperature range 300-600 K. The voltage drop across the thyristors was found to be significantly less than the drop across 6H-SiC thyristors with a blocking voltage of 100 V reported earlier. At a current density j > (5-10) x 10(3) A cm(-2) the contact resistance gives the main contribution to the voltage drop in 4H-SiC thyristors.

引用

页码：1498 / 1499

页数：2

共 8 条

[1]

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[2]

ANIKIN MM, 1992, SEMICONDUCTOR INTERF, P280

[3]

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[4]

LEVINSHTEIN ME, 1997, UNPUB IEEE T ELECT D

[5]

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[6]

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[7]

STRELCHUK AM, 1995, SEMICONDUCTORS+, V29, P614

[8] A high-current and high-temperature 6H-SiC thyristor [J].

Xie, K ;

Zhao, JH ;

Flemish, JR ;

Burke, T ;

Buchwald, WR ;

Lorenzo, G ;

Singh, H .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) :142-144

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