Carrier lifetime extraction from a 6H-SiC high voltage p-i-n rectifier reverse recovery waveform

被引：12

作者：

Ramungul, N ^{[1
]}

Khemka, V

Chow, TP

Ghezzo, M

Kretchmer, J

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

[2] GE, Corp Res & Dev, Schenectady, NY 12301 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

carrier lifetime; reverse recovery; high-level injection; ambipolar lifetime; Auger recombination; space-charge limited current;

D O I：

10.4028/www.scientific.net/MSF.264-268.1065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report the extraction of carrier lifetimes of GH-SIC P-i-N rectifiers under high-level injection from reverse recovery measurements. Studies of carrier lifetime at different operating temperatures and injection levels show that the Auger recombination is the dominant process during high-level injection. An Auger coefficient of 2.5 similar to 3.5 x 10(-29)cm(6)/s has been estimated from the extracted high-level recombination lifetime.

引用

页码：1065 / 1068

页数：4

共 8 条

[1] Nitrogen implanted high voltage, planar, 6H-SiC N+-P junction diodes [J].